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www.irf.com 1 09/22/10 IRFL4315PBF hexfet power mosfet high frequency dc-dc converters benefits applications low gate to drain charge to reduce switching losses fully characterized capacitance including effective c oss to simplify design, (see app. note an1001) fully characterized avalanche voltage and current lead-free parameter max. units i d @ t a = 25c continuous drain current, v gs @ 10v 2.6 i d @ t a = 70c continuous drain current, v gs @ 10v 2.1 a i dm pulsed drain current 21 p d @t a = 25c power dissipation 2.8 w linear derating factor 0.02 w/c v gs gate-to-source voltage 30 v dv/dt peak diode recovery dv/dt 6.3 v/ns t j operating junction and -55 to + 150 t stg storage temperature range soldering temperature, for 10 seconds 300 (1.6mm from case ) c absolute maximum ratings notes through are on page 8 v dss r ds(on) max i d 150v 185 m @v gs = 10v 2.6a symbol parameter typ. max. units r ja junction-to-ambient (pcb mount, steady state) ??? 45 c/w thermal resistance sot-223
IRFL4315PBF 2 www.irf.com parameter min. typ. max. units conditions g fs forward transconductance 3.5 ??? ??? s v ds = 50v, i d = 1.6a q g total gate charge ??? 12 19 i d = 1.6a q gs gate-to-source charge ??? 2.1 3.1 nc v ds = 120v q gd gate-to-drain ("miller") charge ??? 6.8 10 v gs = 10v t d(on) turn-on delay time ??? 8.4 ??? v dd = 75v t r rise time ??? 21 ??? i d = 1.6a t d(off) turn-off delay time ??? 20 ??? r g = 15 ? t f fall time ??? 19 ??? v gs = 10v c iss input capacitance ??? 420 ??? v gs = 0v c oss output capacitance ??? 100 ??? v ds = 25v c rss reverse transfer capacitance ??? 25 ??? pf ? = 1.0mhz c oss output capacitance ??? 720 ??? v gs = 0v, v ds = 1.0v, ? = 1.0mhz c oss output capacitance ??? 48 ??? v gs = 0v, v ds = 120v, ? = 1.0mhz c oss eff. effective output capacitance ??? 98 ??? v gs = 0v, v ds = 0v to 120v dynamic @ t j = 25c (unless otherwise specified) ns parameter typ. max. units e as single pulse avalanche energy ??? 38 mj i ar avalanche current ??? 3.1 a avalanche characteristics s d g parameter min. typ. max. units conditions i s continuous source current mosfet symbol (body diode) ??? ??? showing the i sm pulsed source current integral reverse (body diode) ??? ??? p-n junction diode. v sd diode forward voltage ??? ??? 1.5 v t j = 25c, i s = 2.1a, v gs = 0v t rr reverse recovery time ??? 61 91 ns t j = 25c, i f = 1.6a q rr reverse recoverycharge ??? 160 240 nc di/dt = 100a/s diode characteristics 2.6 21 static @ t j = 25c (unless otherwise specified) parameter min. typ. max. units conditions v (br)dss drain-to-source breakdown voltage 150 ??? ??? v v gs = 0v, i d = 250a ? v (br)dss / ? t j breakdown voltage temp. coefficient ??? 0.19 ??? v/c reference to 25c, i d = 1ma r ds(on) static drain-to-source on-resistance ??? ??? 185 m ? v gs = 10v, i d = 1.6a v gs(th) gate threshold voltage 3.0 ??? 5.0 v v ds = v gs , i d = 250a ??? ??? 25 a v ds = 150v, v gs = 0v ??? ??? 250 v ds = 120v, v gs = 0v, t j = 125c gate-to-source forward leakage ??? ??? 100 v gs = 30v gate-to-source reverse leakage ??? ??? -100 na v gs = -30v i gss i dss drain-to-source leakage current
IRFL4315PBF www.irf.com 3 fig 2. typical output characteristics fig 1. typical output characteristics fig 3. typical transfer characteristics fig 4. normalized on-resistance vs. temperature 5.0 6.0 7.0 8.0 9.0 10.0 v gs , gate-to-source voltage (v) 1.00 10.00 100.00 i d , d r a i n - t o - s o u r c e c u r r e n t ( ) t j = 25c t j = 150c v ds = 50v 20s pulse width -60 -40 -20 0 20 40 60 80 100 120 140 160 0.0 0.5 1.0 1.5 2.0 2.5 t , junction temperature ( c) r , drain-to-source on resistance (normalized) j ds(on) v = i = gs d 10v 2.6a 0.1 1 10 100 v ds , drain-to-source voltage (v) 0.1 1 10 100 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) 5.5v 20s pulse width tj = 150c vgs top 15v 12v 10v 8.0v 7.0v 6.5v 6.0v bottom 5.5v 0.1 1 10 100 v ds , drain-to-source voltage (v) 0.01 0.1 1 10 100 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) 5.5v 20s pulse width tj = 25c vgs top 15v 12v 10v 8.0v 7.0v 6.5v 6.0v bottom 5.5v
IRFL4315PBF 4 www.irf.com fig 6. typical gate charge vs. gate-to-source voltage fig 5. typical capacitance vs. drain-to-source voltage fig 7. typical source-drain diode forward voltage fig 8. maximum safe operating area 1 10 100 1000 v ds , drain-to-source voltage (v) 10 100 1000 10000 c , c a p a c i t a n c e ( p f ) v gs = 0v, f = 1 mhz c iss = c gs + c gd , c ds shorted c rss = c gd c oss = c ds + c gd c oss c rss c iss 0.1 1 10 100 0.0 0.5 1.0 1.5 2.0 2.5 v ,source-to-drain voltage (v) i , reverse drain current (a) sd sd v = 0 v gs t = 150 c j t = 25 c j 1 10 100 1000 v ds , drain-to-source voltage (v) 0.1 1 10 100 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) tc = 25c tj = 150c single pulse 1msec 10msec operation in this area limited by r ds (on) 100sec 02468101214 q g total gate charge (nc) 0 2 4 6 8 10 12 v g s , g a t e - t o - s o u r c e v o l t a g e ( v ) v ds = 120v v ds = 75v v ds = 30v i d = 1.6a for test circuit see figure 13
IRFL4315PBF www.irf.com 5 fig 11. maximum effective transient thermal impedance, junction-to-case fig 10a. switching time test circuit v ds 90% 10% v gs t d(on) t r t d(off) t f fig 10b. switching time waveforms
1 0.1 % + - fig 9. maximum drain current vs. ambient temperature t a , ambient temperature (c) 25 50 75 100 125 150 0.0 0.5 1.0 1.5 2.0 2.5 3.0 i , drain current (a) d 0.1 1 10 100 0.00001 0.0001 0.001 0.01 0.1 1 10 100 notes: 1. duty factor d = t / t 2. peak t = p x z + t 1 2 j dm thja a p t t dm 1 2 t , rectangular pulse duration (sec) thermal response (z ) 1 thja 0.01 0.02 0.05 0.10 0.20 d = 0.50 single pulse (thermal response)
IRFL4315PBF 6 www.irf.com fig 13. on-resistance vs. gate voltage fig 12. on-resistance vs. drain current fig 14a&b. basic gate charge test circuit and waveform fig 15a&b. unclamped inductive test circuit and waveforms fig 15c. maximum avalanche energy vs. drain current d.u.t. v ds i d i g 3ma v gs .3 f 50k ? .2 f 12v current regulator same type as d.u.t. current sampling resistors + - q g q gs q gd v g charge t p v (br)dss i as r g i as 0.01 ? t p d.u.t l v ds + - v dd driver a 15v 20v 0 5 10 15 20 25 i d , drain current (a) 100 120 140 160 180 200 220 240 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( m ? ) v gs = 10v 4.5 6.0 7.5 9.0 10.5 12.0 13.5 15.0 v gs, gate -to -source voltage (v) 0 500 1000 1500 2000 2500 3000 3500 4000 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( m ? ) i d = 2.6a 25 50 75 100 125 150 0 20 40 60 80 100 starting tj, junction temperature ( c) e , single pulse avalanche energy (mj) as i d top bottom 1.4a 2.5a 3.1a
IRFL4315PBF www.irf.com 7

p = de s i gnat e s l e ad- f r e e product (optional) a = assembly site cod e top bottom logo 314p axxxx part number internat ional rectifier hexfet product marking fl014 t his is an irfl014 lot code dat e code (yyww) yy = year ww = we e k notes: 1. for an automotive qualified version of this part please see http://www.irf.com/product-info/auto/ 2. for the most current drawing please refer to ir website at http://www.irf.com/package/
IRFL4315PBF 8 www.irf.com ir world headquarters: 233 kansas st., el segundo, california 90245, usa tel: (310) 252-7105 tac fax: (310) 252-7903 visit us at www.irf.com for sales contact information . 09/2010 data and specifications subject to change without notice. this product has been designed and qualified for the industrial market. qualification standards can be found on ir?s web site.

4.10 (.161) 3.90 (.154) 1.85 (.072) 1.65 (.065) 2.05 (.080) 1.95 (.077) 12.10 (.475) 11.90 (.469) 7.10 (.279) 6.90 (.272) 1.60 (.062) 1.50 (.059) typ. 7.55 (.297) 7.45 (.294) 7.60 (.299) 7.40 (.292) 2.30 (.090) 2.10 (.083) 16.30 (.641) 15.70 (.619) 0.35 (.013) 0.25 (.010) feed direction tr 13.20 (.519) 12.80 (.504) 50.00 (1.969) min. 330.00 (13.000) max. notes : 1. controlling dimension: millimeter. 2. outline conforms to eia-481 & eia-541. 3. each o330.00 (13.00) reel contains 2,500 devices. 3 notes : 1. outline comforms to eia-418-1. 2. controlling dimension: millimeter.. 3. dimension measured @ hub. 4. includes flange distortion @ outer edge. 15.40 (.607) 11.90 (.469) 18.40 (.724) max. 14.40 (.566) 12.40 (.488) 4 4 repetitive rating; pulse width limited by max. junction temperature. starting t j = 25c, l = 7.8mh r g = 25 ? , i as = 3.1a. pulse width 400s; duty cycle 2%. when mounted on 1 inch square copper board. c oss eff. is a fixed capacitance that gives the same charging time as c oss while v ds is rising from 0 to 80% v dss. i sd 1.6a, di/dt 230a/s, v dd v (br)dss , t j 150c.

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